Low spectral chirp and large electroabsorption in a strained InGaAsP/InGaAsP multiple quantum well modulator

Abstract

An intensity modulator based on the quantum confined Stark effect with strained InGaAsP quantum wells and InGaAsP barriers was grown using gas source molecular beam epitaxy. The highest electroabsorption effect and the first estimation of the spectral chirp ever reported with such a modulator under TE polarization mode around 1.55 μm were obtained. The attenuation was measured to be better than −30 dB with a reverse driving voltage lower than 3 V and the phase-amplitude coupling factor has been estimated to be lower than 0.2 over a large operating wavelength range.