Substrate dependence of InP m.e.s.f.e.t. performance

Abstract

There is evidence to suggest that Fe outdiffuses, during the growth, into the epitaxial films prepared by vapour-phase epitaxy at 650°C. Field-effect transistors on Fe-doped material show substantial looping that was absent on Cr-doped material and exhibit about 2 dB worse noise figure at about 7 GHz. Experiments with low 1015 S-doped InP grown on Sn-, Cr- and Fe-doped substates indicate that such outdiffusion is typically about 5 μm. Saturation velocity levels in the m.e.s.f.e.t. channel are about 1.7 × 107 cm/s and 1.3 × 107 cm/s, associated with Cr and Fe doped substrates, respectively.