Substrate Temperature Dependence of Photovoltaic Properties of β-FeSi₂/Si Heterojunctions Prepared by Facing-Target DC Sputtering

Abstract

We fabricated n-type β-FeSi2/ p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660 °C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current–voltage characterization and the crystalline structural evaluation of the β-FeSi2/Si heterojunctions. It was found that 600 °C is the optimum substrate temperature suitable for the photovoltaic application.