A 2GHz 0.25μm SiGe BiCMOS Oscillator with Flip-Chip Mounted BAW Resonator

Abstract

An RF oscillator consisting of a BAW resonator on top of a SiGe BiCMOS IC is presented. The circuit achieves a phase noise of -124dBc/Hz at 100kHz carrier offset, -160dBc/Hz floor and supply pushing of 65ppm/V while consuming 12mW in an IC footprint of 0.043mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .