Low Temperature Deposition of Metal Nitrides by Thermal Decomposition of Organometallic Compounds

Abstract

Decomposition reaction of dialkylamides of boron, silicon, tin, titanium, zirconium, niobium, and tantalum was investigated. The amides of transition metals decomposed to the corresponding nitrides at 300~176 whereas those of boron, silicon, and tin yielded elemental deposits at higher temperatures. In the deposition of titanium nitride from titanium tetrakis(dimethylamide), two opt imum temperatures at 400 ~ and at 800 ~ in nitrogen or hydrogen at-mosphere were found, but in argon only low temperature deposition was possible. The low and high temperature processes are discussed in relation to mass spectral analysis of the exhaust gases formed at various decomposition temperatures of t i tanium amide. Metal nitrides are well known to have outstanding physical and chemical properties and have been pre-pared by the reactions of metal halides or hydrides with nitrogen + hydrogen or ammonia, or of metals