Comparison of P and Sb as <i>n</i>-dopants for Si molecular beam epitaxy

Abstract

The incorporation properties segregation, activation, and desorption in Si molecular beam epitaxy of phosphorus (P) are investigated experimentally in comparison to antimony (Sb) over a temperature range from 300 to 900 °C with Secondary Ion Mass Spectroscopy and electrochemical Capacitance/Voltage measurements. P exhibits superior properties over the full temperature range.