Publication | Closed Access
Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy
18
Citations
20
References
2004
Year
Materials ScienceMaterials EngineeringEpitaxial GrowthEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceN-rich SideCategoryiii-v SemiconductorMicrostructure
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