Vacuum · 2000 · 11 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceSemiconductor MaterialsSurface ScienceInterface EngineeringMetal-semiconductor ContactsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsInterface FormationInterfacial Reaction KineticsInterfacial Reaction MechanismsSilicon Carbide (Sic) Materials
10
Toughening of MoSi2 with a ductile (niobium) reinforcement
Thanh-Chi Lu, A.G. Evans, R. J. Hecht et al. · Acta Metallurgica et Materialia · 1991 · 146 citations
Natural Sciences, Materials Engineering, Materials Science +10