Analysis of MBE growth mode for GaN epilayers by RHEED - Concepedia

Concepedia

Publication | Closed Access

Analysis of MBE growth mode for GaN epilayers by RHEED

56

Citations

10

References

1998

Year

Hajime Okumura, Krishnan Balakrishnan, Hiroshi Hamaguchi, T. Koizumi, Shigefusa F. Chichibu, Hisayuki Nakanishi, Takao Nagatomo, Sadafumi Yoshida

Journal of Crystal Growth

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceMolecular Beam EpitaxyCategoryiii-v SemiconductorMbe Growth Mode

References

	Year	Citations

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