Optical properties of Ge nanowires grown on Si(100) and (111) substrates: Nanowire–substrate heterointerfaces

Abstract

Abstract We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at low‐defect density Ge NW – Si substrate interfaces. Both, PL and RS data indicate that Si–Ge intermixing and strain are more pronounced for the Ge NW – (111) Si interface, while NWs grown on (100) Si substrates are relaxed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)