B. V. Kamenev - Concepedia

Author

B. V. Kamenev

New Jersey Institute of Technology

Also Known As

B V Kamenev, B. Kamenev, B. V. Kamenev, B.V. Kamenev, Boris Kamenev, Boris V. Kamenev, Kamenev, B.

Publications

540

Citations

H-Index

Concepts

All Affiliations

New Jersey Institute of Technology Lomonosov Moscow State University Institute for Microstructural Sciences Hewlett-Packard (United States)Technical University of Munich

About

B. V. Kamenev is an author at New Jersey Institute of Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	420
2	Applied Physics	14	17	396
3	Materials Science	14	15	373
4	Chemistry	3	3	97
5	Chemical Engineering	1	1	24

B. V. Kamenev

Publications

420

Citations

H-Index

Page 1

	Year	Citations
Comparative study of photoluminescence of undoped and erbium-doped size-controlled nanocrystalline Si∕SiO2 multilayered structures V. Yu. Timoshenko, B. V. Kamenev, S. A. Teterukov, Journal of Applied Physics Optical MaterialsEngineeringLuminescent GlassOptoelectronic DevicesChemistry	2004	55
Photoluminescence and Raman scattering in three-dimensional Si/Si1−xGex nanostructures B. V. Kamenev, L. Tsybeskov, J.‐M. Baribeau, Applied Physics Letters EngineeringDetailed RamanOptoelectronic DevicesSilicon On InsulatorSemiconductor Nanostructures	2004	47
Laser-Induced Melting of Porous Silicon V. Yu. Timoshenko, Th. Dittrich, I. Sieber, physica status solidi (a) Materials ScienceAdvanced Laser ProcessingLaser-induced MeltingEngineeringXecl Laser	2000	38
Self-trapped excitons in silicon nanocrystals with sizes below 1.5 nm in Si/SiO2 multilayers B. V. Kamenev, A. G. Nassiopoulou Journal of Applied Physics Self-trapped Exciton AnnihilationOptical MaterialsEngineeringOptoelectronic DevicesSilicon On Insulator	2001	28
Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures B. V. Kamenev, H. Grebel, L. Tsybeskov, Applied Physics Letters EngineeringSurface-enhanced Raman ScatteringPolarized RamanSilicon On InsulatorSemiconductor Nanostructures	2003	27
Excitation-dependent photoluminescence in Ge∕Si Stranski-Krastanov nanostructures B. V. Kamenev, Eun‐Kyu Lee, H.-Y. Chang, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertySemiconductor Nanostructures	2006	25
Electrochemical polymerization, optical and electrical characterizations of polycarbazole on single wall carbon nanotubes Y. Diamant, Jun Chen, Hui Han, Synthetic Metals Materials ScienceElectroactive MaterialChemical EngineeringConducting PolymerEngineering	2005	24
Diffusion photovoltage in poly(<i>p</i> -phenylenevinylene) Volodimyr V. Duzhko, Th. Dittrich, B. V. Kamenev, Journal of Applied Physics Optical MaterialsPpv OriginatesEngineeringOrganic Solar CellPhotovoltaics	2001	21
Optical properties of Ge nanowires grown on Si(100) and (111) substrates: Nanowire–substrate heterointerfaces B. V. Kamenev, Vidushi Sharma, L. Tsybeskov, physica status solidi (a) Materials ScienceSemiconductorsGe NanowiresOptical MaterialsEngineering	2005	19
Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2 V. Ioannou-Sougleridis, B. V. Kamenev, D.N. Kouvatsos, Materials Science and Engineering B PhotoluminescenceEngineeringNanotechnologyHigh Electric FieldApplied Physics	2003	18

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