A Simple Route to the Synthesis of Pr₂O₃ High‐<i>k</i> Thin Films

Abstract

High‐quality Pr 2 O 3 high‐ k thin films with very promising electrical properties have been prepared by metal–organic chemical vapor deposition on Si(100) substrates. The most critical factor for selective and reproducible Pr 2 O 3 film formation is the oxygen partial pressure in the reaction chamber. X‐ray (see Figure) and transmission electron microscopy diffraction patterns show that the oxide layer grows with a hexagonal random structure.