Nd3+ incorporation in CaF2 layers grown by molecular beam epitaxy

Abstract

Molecular beam epitaxy of Nd3+-doped CaF2 monocrystalline layers on CaF2 substrates is demonstrated. Nd concentration is controlled by the temperature of an evaporation cell containing NdF3. Photoluminescence spectra of the samples show emissions from Nd3+ centers in tetragonal symmetry sites as a consequence of the charge compensation mechanism provided by interstitial F− ions.