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An accurate absolute scattering factor for silicon
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1969
Year
Materials SciencePendellösung Fringe MethodOptical MaterialsEngineeringPhysicsCrystalline DefectsOptical PropertiesApplied PhysicsWave ScatteringLight ScatteringAtomic PhysicsAccurate AbsoluteBragg ReflexionAtomic Scattering FactorAmorphous SolidSilicon On InsulatorMicroelectronicsCrystallography
The 220 Bragg reflexion of silicon has been studied in considerable detail. By the Pendellösung fringe method we have measured the atomic scattering factor with an internal consistency of better than 0.1%. Particular care was taken to exclude systematic errors which might arise from elastic strain, X-ray absorption and X-ray polarization effects. The crystal was cut parallel to the Bragg planes at the points of observation so that its thickness could be directly measured with a travelling microscope. At the value of sinθ/λ corresponding to the 220 Bragg reflexion, the experimental atomic scattering factors (20°C) were: f = 8.478 ± 0.008 for Mo Kα1 radiation; f = 8.448 ± 0.012 for Ag Kα1 radiation, and f (Mo Kα1)/f (Ag Kα1) = 1.0035 ± 0.0007.