A two-terminal nanocrystalline silicon memory device at room temperature

Abstract

We describe the fabrication and operation of a polysilicon room-temperature memory device. The source-drain current-voltage characteristics of this device, with floating gate, demonstrate periodic current steps as well as hysteresis generic for a memory device. Electron micrographs show that the channel consists of 3-5 nm silicon grains. A model of single charge trapping controlled conduction through the device channel is suggested.