Growth of (111) HgCdTe on (100) Si by MOVPE using metalorganic tellurium adsorption and annealing - Concepedia

Concepedia

Publication | Closed Access

Growth of (111) HgCdTe on (100) Si by MOVPE using metalorganic tellurium adsorption and annealing

15

Citations

16

References

1996

Year

K. Maruyama, H. Nishino, Takuya Okamoto, Satoshi Murakami, Tamio Saito, Y. Nishijima, Masahito Uchikoshi, M. Nagashima, Hideo Wada

Journal of Electronic Materials

Materials EngineeringMaterials ScienceChemical EngineeringIi-vi SemiconductorEngineeringNanoelectronicsSurface ScienceChemisorptionSemiconductor MaterialChemistrySilicon On InsulatorChemical Vapor DepositionMetalorganic Tellurium Adsorption

References

	Year	Citations

Page 1

Page 1