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Reduced leakage current in La and Ni codoped BiFeO3 thin films
161
Citations
11
References
2007
Year
Materials ScienceMagnetismMultiferroicsMaterials EngineeringEngineeringBifeo3 Thin FilmsCrystal StructureFerroelectric ApplicationNanoelectronicsOxide ElectronicsApplied PhysicsBlfno FilmsGallium OxideChemistryThin FilmsBfo Films
La (2.5%) and Ni (2.5%) codoped BiFeO3 (BLFNO) thin films were formed by chemical solution deposition on Pt∕Ti∕SiO2∕Si(100) structures. BiFeO3 (BFO), La(5%)-doped BFO, and Ni(5%)-doped BFO films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was single perovskite phase, however, structural modifications were observed in La-doped films. The leakage current density at 500kV∕cm was reduced by approximately three orders of magnitude by codoping La and Ni atoms, compared with BFO films. In BLFNO films, well saturated remanent polarization of 70μC∕cm2 was obtained at room temperature at 10kHz with the reduced coercive field by approximately 30%.
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