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Yellow-green ZnCdSe/BeZnTe II-VI laser diodes grown on InP substrates
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Citations
13
References
2002
Year
Materials ScienceIi-vi SemiconductorElectrical EngineeringEngineeringInp SubstratesApplied PhysicsLaser-assisted DepositionMolecular Beam EpitaxyPulsed Laser DepositionIi-vi Laser DiodesCl SlOptoelectronicsCompound Semiconductor
Yellow-green (560 nm) II-VI laser diodes on InP substrates were successfully operated under the pulsed current injection at 77 K. A separate confinement heterostructure was formed by employing MgSe/BeZnTe:N superlattices (SL) as p-cladding layers and MgSe/ZnCdSe:Cl SL as n-cladding layers. The threshold current density was about 2.5 kA/cm2.
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