c-erbB-2 sensing using AlGaN∕GaN high electron mobility transistors for breast cancer detection

Abstract

Antibody-functionalized, Au-gated AlGaN∕GaN high electron mobility transistors (HEMTs) were used to detect c-erbB-2, which is a breast cancer marker. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN∕GaN HEMT drain-source current showed a rapid response of less than 5s when target c-erbB-2 antigen in a buffer at clinically relevant concentrations was added to the antibody-immobilized surface. We could detect a range of concentrations from 16.7to0.25μg∕ml. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaN∕GaN HEMTs for breast cancer screening.