Energy band diagram of In: ZnO/p-Si structures deposited using chemical spray pyrolysis technique

Abstract

Near-ideal In: ZnO/p-Si heterojunction band edge lineup has been investigated with aid of I–V and C–V measurements. The heterojunction was manufactured by spray pyrolysis method of (Zn (CH3COO)2·2H2O) at different indium doping concentrations on monocrystalline p-type silicon. The experimental data of the conduction band offset ∆Ec and valence band offset ∆Ec were compared with theoretical values. The band offset ∆Ec = 0.45 eV and ∆Ev = 1.65 eV obtained at 300 K. The energy band diagram of In: ZnO/p-Si HJ was constructed. C–V measurements depict that the junction was an abrupt type and the built-in voltage was determined from C−2–V plot.