Range parameters of protons in silicon implanted at energies from 0.5 to 300 keV - Concepedia

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Range parameters of protons in silicon implanted at energies from 0.5 to 300 keV

33

Citations

11

References

1980

Year

F.J. Demond, S. Kalbitzer, H. Mannsperger, Gerhard Müller

Nuclear Instruments and Methods

Ion ImplantationEngineeringPhysicsApplied PhysicsRange ParametersSemiconductor Device FabricationIon BeamSilicon On InsulatorMicroelectronics

References

	Year	Citations

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