Effect of deposition conditions and thermal annealing on the charge trapping properties of SiNx films

Abstract

The density of charge trapping centers in SiNx:H films deposited by plasma enhanced chemical vapor deposition is investigated as a function of film stoichiometry and postdeposition annealing treatments. In the as-deposited films, the defect density is observed to increase with an increasing N/Si ratio x in the range of 0.89–1.45, and to correlate with the N–H bond density. Following the annealing in the temperature range of 500–800 °C, the defect density increases for all N/Si ratios, with the largest increase observed in the most Si rich samples. However, the defect density always remains highest in the most N rich films. The better charge storage ability suggests the N rich films are more suitable for the creation of negatively charged nitride films on solar cells.