High voltage devices integration into advanced CMOS technologies

Abstract

This paper focuses on CMOS technologies for mobile applications having integrated high voltage devices to address analog baseband and RF power applications. Technology evolution from BCD-like to advanced CMOS technologies on bulk and thin SOI substrates and some selected device architectures (extended drain MOSFET, drift MOSFET, lateral and vertical diffused MOSFET) are reviewed. Main challenges encountered when integrating these devices in advanced CMOS are explained. The influence of the gate oxide thickness on the relevant figures of merit and some considerations on performance-reliability trade-off are provided.