Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon

Jianming Dai, Jiangquan Zhang, Weili Zhang, D. Grischkowsky

Journal of the Optical Society of America B · 2004 · 475 citations · 17 references

Concepts

Abstract

The far-infrared absorption and index of refraction of high-resistivity, float-zone, crystalline silicon has been measured by terahertz time-domain spectroscopy. The measured new upper limit for the absorption of this most transparent dielectric material in the far infrared shows unprecedented transparency over the range from 0.5 to 2.5 THz and a well-resolved absorption feature at 3.6 THz. The index of refraction shows remarkably little dispersion, changing by only 0.0001 over the range from 0.5 to 4.5 THz.

References

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