Small · 2015 · 81 citations · 23 references
EngineeringComputer EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignMetal OxidesMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsCmos Fabrication ProcessesCmos Logic CircuitsCmos Logic DesignComplementary Metal-oxide-semiconductor LogicLow-voltage Cmos DesignSmall-signal GainStatic Power DissipationTransconductance
Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution-processed/printed transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly efficient electrolyte-gating approach one can obtain printed and low-voltage operated oxide CMOS logics with high signal gain (≈21 at a supply voltage of only 1.5 V) and low static power dissipation.
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