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X-ray standing wave analysis for bromine chemisorbed on silicon
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1982
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Surface CharacterizationX-ray SpectroscopySilicon Surface AtomsPhysicsSurface ChemistryEngineeringNatural SciencesSurface ScienceApplied PhysicsX-ray DiffractionSurface AnalysisChemisorbed BrominePhysical ChemistryVacuum DeviceWave AnalysisChemistryMicroelectronicsBromine Atoms
X-ray standing wave measurements on single crystals of silicon are used to determine the coverage and position of chemisorbed bromine. Detailed analysis of the position information leads to the conclusion that silicon surface atoms bonded to adsorbed bromine atoms are in extrapolated bulk-line positions. Direct measurement of the desorption of correlated bromine in air demonstrates the high stability of the Br/Si surface interface.