Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 - Concepedia

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Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

117

Citations

8

References

2006

Year

Rachel A. Oliver, Menno J. Kappers, Joy Sumner, Ranjan Datta, C. J. Humphreys

Journal of Crystal Growth

Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringPhysicsApplied PhysicsSitu TreatmentGan Power DeviceMultilayer HeterostructuresMovpe-grown GanMicrostructure

References

	Year	Citations

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