Etching nanometer sized holes of variable depth from carbon cluster impact induced defects on graphite surfaces

Abstract

Carbon cluster ion impact induced surface damage (500, 1850, and 4000 eV) of highly oriented pyrolytic graphite (HOPG) was imaged on an atomic scale with scanning tunneling microscopy. Penetration depth was accessed by oxygen etching of ion impact induced defects. Depending on ion energy, etched holes up to 6 monolayers deep were observed. Surface morphologies of HOPG crystals can be tailored by the described method promising many applications for surface science studies and nanostructuring.