"The merged P-I-N Schottky (MPS) rectifier: A high-voltage, high-speed power diode"

Abstract

Experimental confirmation of the theoretically predicted superior characteristics of the MPS rectifier for high voltage, high frequency power switching applications has been obtained by the fabrication of devices with aluminum Schottky barriers. These devices exhibit a 6 to 8 fold smaller reverse recovery stored charge and operate at 1.5 to 3 times the forward current density when compared with the P-I-N rectifer. Typical applications are in motor drive and switch mode power supply circuits.