1987 · 33 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsPower ElectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesP-n JunctionsSwitch-mode Power SuppliesWide-bandgap Semiconductor DevicesCurrent DensityDiode RectifiersHigh-frequency RectifiersMotor Drive ApplicationsSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky Barriers
Experimental confirmation of the theoretically predicted superior characteristics of the MPS rectifier for high voltage, high frequency power switching applications has been obtained by the fabrication of devices with aluminum Schottky barriers. These devices exhibit a 6 to 8 fold smaller reverse recovery stored charge and operate at 1.5 to 3 times the forward current density when compared with the P-I-N rectifer. Typical applications are in motor drive and switch mode power supply circuits.
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