Hole transport in 1,1-bis(di-4-tolylaminophenyl)cyclohexane

Abstract

Hole mobilities have been measured in vapor deposited films of 1,1-bis(di-4-tolylaminophenyl)cyclohexane over an extended range of fields and temperatures. At 295 K, the mobility is approximately 10−2 cm2/V s, the highest value for a disordered molecular solid reported thus far. Monte Carlo simulations of random walk in a geometrically and energetically disordered medium demonstrate that the time dependence of the photocurrent and the field and temperature dependencies of the mobility can be described quantitatively in terms of the inherent disorder and its effect on charge transport. No polaronic or trapping phenomena need to be invoked to reproduce even subtle features of the experimental results.