Applied Physics Letters · 2010 · 45 citations · 12 references
EngineeringSemiconductorsOptical PropertiesInfrared OpticEnergy SeparationsHole TransitionsCompound SemiconductorPhotonicsPhotoluminescencePhysicsInfrared SpectroscopyInfrared SensingPhotoelectric MeasurementOptoelectronicsInfrared SensorNatural SciencesSpectroscopyApplied PhysicsP-gaas/algaas DetectorsHeavy-hole Transitions
Hole transitions from the heavy-hole (hh) to the light-hole (lh) band contributing to the 4–10 μm response range are reported on p-GaAs/AlGaAs detectors. The detectors show a spectral response up to 16.5 μm, operating up to a temperature of 330 K where the lh-hh response is superimposed on the free-carrier response. Two characteristic peaks observed between 5–7 μm are in good agreement with corresponding energy separations of the lh and hh bands and thus originated from lh-hh transitions. Results will be useful for designing multi-spectral detection which could be realized on a single p-GaAs structure.
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Fabrizio R. Giorgetta, Esther Baumann, Marcel Graf et al. · IEEE Journal of Quantum Electronics · 2009 · 214 citations
Engineering, Semiconductor Quantum Wells, Quantum Sensing +17