Sputtering of Si with keV Ar⁺Ions. I. Measurement and Monte Carlo Calculations of Sputtering Yield

Abstract

Sputtering has been studied both in experiment with an ion microprobe analyzer and in theory by a Monte Carlo calculation technique. For the sputtering yield, the experiment has been performed with uniform argon ion beam for polycrystalline silicon and calculations based on the binary collision model have been made for amorphous silicon at ion energies of 3, 5 and 10 keV for angles of ion incidence θ=0°, 45° and 60°, respectively. Monte Carlo calculations are compared the sputtering yields as a function of energy and angle of incidence. Some theoretical results are also shown for angular distributions of the sputtered atoms to see the qualitative tendency of the preferred angle of sputtered atoms with primary ion energy for inclined incidence.