<i>n</i>-ZrS3/<i>p</i>-WSe2 heterojunctions

Abstract

We report the first heterojunction with WSe2 (Eg=1.16 eV) which also introduces the semiconductor ZrS3 (Eg=2.05 eV) to device use. The junctions were prepared in sealed ampoules by iodine vapor transport of presynthesized zirconium trisulfide onto substrates of tungsten diselenide. Diodes exhibited a rectification ratio of up to 20 at 1 V. The photocurrent saturated at 0.5–4 V of reverse bias. The highest quantum efficiency for HeNe laser light (λ=632.8 nm) was 0.5 at 4-V reverse bias.