Demonstration of the heterostructure field-effect transistor as an optical modulator

Abstract

A new semiconductor waveguide absorption modulator is demonstrated utilizing the heterostructure field-effect transistor structure. The modulator of 300 μm length and 10 μm width achieves an extinction ratio of 8 for a gate voltage change of 2.5 V and an absorption change greater than 2300 cm−1. The transistor transconductance is 92 ms/mm for a 1 μm device and an identical structure has been reported as an edge-emitting laser providing an ideal combination for optoeletronic integration.