Quantum efficiency of InP field-assisted photocathodes

Abstract

Reflection-mode quantum efficiencies have been calculated for the p-InP bias-assisted photoemitter (TE cathode) and have been found to be consistent with experimental data. The calculations, using Monte Carlo techniques, consider the transport of photogenerated electrons to the surface as well as the transmission of electrons at the surface into vacuum. Dependence of the predicted yield upon bias voltage and doping is discussed. Acceptor doping in the mid 1016/cm3 range is indicated as a good choice for a high quantum efficiency photocathode.