Physical Review Letters · 2002 · 86 citations · 20 references
EngineeringPhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsCarrier TransportIii-v SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsTwo-dimensional SemiconductorsWide Band Gap SemiconductorsConductivityElectrical Transport PropertiesElectronic ConductivityFermi Liquid TheoryMagnetoresistanceTemperature DependenceTemperature-dependent ResistivityTwo-dimensional Semiconductor Heterostructures
On a high-mobility two-dimensional hole gas (2DHG) in a $\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{l}\mathrm{A}\mathrm{s}$ heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, ${k}_{B}T\ensuremath{\tau}/\ensuremath{\hbar}>1$. It is shown that the ``metallic'' behavior of the resistivity ($d\ensuremath{\rho}/dT>0$) of the low-density 2DHG is caused by the hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant ${F}_{0}^{\ensuremath{\sigma}}$ which controls the sign of $d\ensuremath{\rho}/dT$.
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Energy Structure and Quantized Hall Effect of Two-Dimensional Holes
H. L. Störmer, Z. Schlesinger, A. M. Chang et al. · Physical Review Letters · 1983 · 339 citations