Applied Physics Letters · 2008 · 677 citations · 21 references
EngineeringElectrical EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin-film TransistorsHall EffectOxide Thin-film TransistorsP-type Oxide SemiconductorsPulsed Laser DepositionThin Oxide FilmsThin Oxide LayersThin-film OxidesTin Oxides
This paper reports that among known p-type oxide semiconductors, tin monoxide (SnO) has a high hole mobility and produces good p-type oxide thin-film transistors (TFTs). Device-quality SnO films were grown epitaxially on (001) yttria-stabilized zirconia substrates at 575°C by pulsed laser deposition. These exhibited a Hall mobility of 2.4cm2V−1s−1 at room temperature. Top-gated TFTs, using epitaxial SnO channels, exhibited field-effect mobilities of 1.3cm2V−1s−1, on/off current ratios of ∼102, and threshold voltages of 4.8V.
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Organic electroluminescent diodes
Chak Wah Tang, S. A. VanSlyke · Applied Physics Letters · 1987 · 14.3K citations
Natural Sciences, Materials Engineering, Materials Science +17
P-type electrical conduction in transparent thin films of CuAlO2
Hiroshi Kawazoe, Masahiro Yasukawa, Hiroyuki Hyodo et al. · Nature · 1997 · 2.1K citations
Natural Sciences, Materials Engineering, Materials Science +14