p -channel thin-film transistor using p-type oxide semiconductor, SnO

Abstract

This paper reports that among known p-type oxide semiconductors, tin monoxide (SnO) has a high hole mobility and produces good p-type oxide thin-film transistors (TFTs). Device-quality SnO films were grown epitaxially on (001) yttria-stabilized zirconia substrates at 575°C by pulsed laser deposition. These exhibited a Hall mobility of 2.4cm2V−1s−1 at room temperature. Top-gated TFTs, using epitaxial SnO channels, exhibited field-effect mobilities of 1.3cm2V−1s−1, on/off current ratios of ∼102, and threshold voltages of 4.8V.