Publication | Closed Access
Theoretical Study of Momentum Matrix Elements of GaN
42
Citations
13
References
1996
Year
SemiconductorsWide-bandgap SemiconductorElectrical EngineeringCategoryquantum ElectronicsEngineeringPhysicsMomentum Matrix ElementsApplied PhysicsQuantum MaterialsCondensed Matter PhysicsAluminum Gallium NitrideValence BandsGan Power DeviceWurtzite GanCategoryiii-v SemiconductorCondensed Matter Theory
The interaction between the conduction band and valence bands in wurtzite GaN is theoretically investigated by means of the first-principles calculation and the k \cdotp p theory. The momentum matrix elements are derived from the first-principles electronic band structure, calculated by a full-potential linearized augmented plane wave method. We also show analytical expressions of the momentum matrix elements, based on the 8×8 k \cdotp p theory for the wurtzite structure. The values estimated from the analytical expressions are in good agreement with those obtained from the first-principles calculation.
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