Applied Physics Letters · 2008 · 123 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor MaterialsThin FilmsDopingMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film MaterialsThin-film TransistorsDoped SemiconductorsDoping ControlDoping In Thin FilmsElectrical PropertiesSemiconductor Oxide Thin FilmsSolution-processed MaterialsThin Oxide FilmsZinc Oxides
Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [Ga∕Zn (%)]. A field-effect mobility of 1.63cm2∕Vs and a drain current on/off ratio of 4.17×106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.
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