Characterisation of dark current in novel Hg1−xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion - Concepedia

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Characterisation of dark current in novel Hg1−xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion

10

Citations

9

References

2000

Year

M. H. Rais, C.A. Musca, J. Antoszewski, J.M. Dell, Brett Nener, L. Faraone

Journal of Crystal Growth

Ii-vi SemiconductorElectrical EngineeringN-on-p JunctionsEngineeringApplied PhysicsNovel Hg1−xcdxte Mid-wavelengthPlasma-induced Type ConversionOptoelectronicsPhotovoltaicsCompound Semiconductor

References

	Year	Citations

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