Titanium-doped indium oxide: A high-mobility transparent conductor

Abstract

We report on the effects of titanium doping (0–7at.%) on the optical and electrical properties of In2O3 using combinatorial deposition and analysis techniques. Maximum mobilities are observed at Ti concentrations of 1.5–2.5at.% and are >80cm2∕Vs in sputtered films. The carrier concentration increased with titanium content to a high of 8.0×1020cm−3. Data show that one carrier is generated per added Ti between 1 and 3at.%. Conductivities up to 6260Ω−1cm−1 were observed. These remained very high >5000Ω−1cm−1 across a wide compositional range. The optical transparency is high (>85%) in a wide spectral range from 400nm to at least 1750nm. The work function of titanium-doped indium oxide varies substantially over the studied compositional range.