Publication | Closed Access
Microdischarge devices fabricated in silicon
136
Citations
7
References
1997
Year
EngineeringGlow DischargeVacuum DeviceSilicon On InsulatorPlasma ElectronicsPulse PowerElectronic PackagingMicrofluidicsNeon DischargesElectrical EngineeringHollow Cathode DischargeSemiconductor Device FabricationMicroelectronicsMicro TechnologyNe PressuresMicrofabricationMicrodischarge DevicesApplied PhysicsGas Discharge Plasma
Cylindrical microdischarge cavities 200–400 μm in diameter and 0.5–5 mm in depth have been fabricated in silicon and operated at room temperature with neon or nitrogen at specific power loadings beyond 10 kW/cm3. The discharges are azimuthally uniform and stable operation at N2 and Ne pressures exceeding 1 atm and ∼600 Torr, respectively, has been realized for 400 μm diameter devices. Spectroscopic measurements on neon discharges demonstrate that the device behaves as a hollow cathode discharge for pressures >50 Torr. As evidenced by emission from Ne and Ne+ (2P,2F) states as well as N2 (C→B) fluorescence (316–492 nm), these discharge devices are intense sources of ultraviolet and visible radiation and are suitable for fabrication as arrays.
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