Publication | Open Access
Electronic effects on the melting of small gallium clusters
32
Citations
56
References
2012
Year
Bulk GalliumEngineeringComputational ChemistryChemistryMolecular DynamicsQuantum MaterialsMolecular KineticsCluster ScienceMolecular SolidPhysicsPhysical ChemistryGallium OxideQuantum ChemistrySmall Gallium ClustersParallel TemperingNatural SciencesApplied PhysicsCondensed Matter PhysicsCluster ChemistryElectronic Effects
Motivated by experimental reports of higher-than-bulk melting temperatures in small gallium clusters, we perform first-principles molecular dynamics simulations of Ga(20) and Ga(20)(+) using parallel tempering in the microcanonical ensemble. The respective specific heat (C(V)) curves, obtained using the multiple histogram method, exhibit a broad peak centered at approximately 740 and 610 K--well above the melting temperature of bulk gallium (303 K) and in reasonable agreement with experimental data for Ga(20)(+). Assessment of atomic mobility confirms the transition from solid-like to liquid-like states near the C(V) peak temperature. Parallel tempering molecular dynamics simulations yield low-energy isomers that are ~0.1 eV lower in energy than previously reported ground state structures, indicative of an energy landscape with multiple, competing low-energy morphologies. Electronic structure analysis shows no evidence of covalent bonding, yet both the neutral and charged clusters exhibit greater-than-bulk melting temperatures.
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