Publication | Closed Access
Investigation of the amorphous-to-crystalline transition in Mo/Si multilayers
144
Citations
28
References
2001
Year
Materials ScienceEpitaxial GrowthEngineeringPhysicsCrystalline DefectsMo Layer ThicknessesSurface ScienceApplied PhysicsMo/si MultilayersSemiconductor MaterialThin Film Process TechnologyThin FilmsMo LayersMolecular Beam EpitaxyAmorphous SolidSilicon On InsulatorThin Film Processing
The microstructure of Mo/Si multilayers grown by magnetron and ion beam sputter deposition has been characterized over a range of Mo layer thicknesses. We observe an abrupt amorphous-to-crystalline transition in the Mo layers at a thickness of ∼2 nm. The transition exhibits several interesting features including a large decrease in the thickness of the Si-on-Mo interlayer and a significant increase in the roughness of the multilayer. We present an explanation for the transition behavior in terms of a critical thickness for the nucleation of Mo crystallites.
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