Journal of The Electrochemical Society · 2012 · 20 citations · 22 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials PhysicsNanomaterialsCarbon NanomaterialsElectrode KineticsElectrode MaterialsGraphene NanomaterialsMemristive MaterialsSemiconductor NanomaterialsGraphene ElectrodesGraphene OxideGraphene-based ElectrodesGraphene-based MaterialsResistive SwitchingResistive Switching MaterialsTemperature Dependence
Resistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These switching directions are correlated to the underlying switching mechanisms as revealed by field dependence, temperature dependence and area dependence. Our observation also suggests that both oxygen related functional groups absorption/release and electrode metal ions diffusion play important roles in bipolar resistive switching of GO.
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Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Hu Young Jeong, Jong Yun Kim, Jeong Won Kim et al. · Nano Letters · 2010 · 598 citations
Natural Sciences, Materials Engineering, Materials Science +17
Nanometer-scale switches using copper sulfide
Toshitsugu Sakamoto, H. Sunamura, H. Kawaura et al. · Applied Physics Letters · 2003 · 514 citations