Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

Abstract

Intrinsic ferromagnetism in the high-quality wurtzite ${\mathrm{Ga}}_{0.937}{\mathrm{Mn}}_{0.063}\mathrm{N}$ semiconductor is unambiguously demonstrated by both macroscopic magnetization measurements and x-ray magnetic circular dichroism. The structural quality of the samples grown by plasma-assisted molecular beam epitaxy is confirmed by x-ray diffraction and x-ray linear dichroism. The Curie temperature of a (Ga,Mn)N sample with 6.3% Mn is $\ensuremath{\approx}8\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ with a spontaneous magnetic moment of $2.4{\ensuremath{\mu}}_{B}$ per Mn at $2\phantom{\rule{0.3em}{0ex}}\mathrm{K}$.