Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy

Abstract

The heteroepitaxial growth of InP/GaAs/Si by hydride vapor phase epitaxy achieves laser diode (LD) device quality. Etch-pit density (EPD) measurements and transmission electron microscopy reveal two kinds of defects, threading dislocations and stacking faults, in the InP layer. Lowering the growth temperature of the direct InP layer on GaAs/Si reduces stacking fault density to the order of 10 4 cm -2 . Room-temperature continuous-wave operation of an InGaAsP 1.5-µ m-wavelength LD fabricated on InP/GaAs/Si confirms its crystal quality.