Band-Gap Energy and Effective Mass of BGaN

Abstract

The band-gap energies and effective masses of boron gallium nitride (BGaN) ternaries were estimated. The band-gap energies of B x Ga 1- x N ternaries increase proportionally with the boron composition x . However, the effective masses of electrons and holes in BGaN ternaries are almost equal to those of GaN. We have fabricated BGaN layers on 6H–SiC substrates using metal-organic vapor phase epitaxy (MOVPE). We examined the photoluminescence spectra of these layers. The band-gap energies and effective masses estimated using the photoluminescence results are consistent with those estimated theoretically.