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Volatile Surfactant-Assisted MOCVD: Application to LaAlO3 Thin-Film Growth
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2000
Year
Materials ScienceChemical EngineeringLaalo3 FilmsEngineeringOxide ElectronicsSurface ScienceVolatile Surfactant-assisted MocvdVsa MocvdThin Film Process TechnologyChemistryThin FilmsChemical DepositionChemical Vapor DepositionThin Film ProcessingThermal Mocvd
A new approach to the CVD of oxides with kinetically hindered diffusion, called volatile surfactant-assisted (VSA) metal–organic chemical vapor deposition (MOCVD), consisting of film deposition in the presence of a volatile low melting point oxide (Bi2O3) has been developed. The process was applied to the deposition of LaAlO3 films, and a model of the process was proposed. Epitaxial and textured LaAlO3 films on various substrates were obtained, both by thermal and VSA MOCVD. A marked improvement in crystalline quality and surface morphology was found for the films deposited by VSA MOCVD. LaAlO3 films obtained in the presence of Bi2O3 did not contain Bi. A significant increase (up to five times) of the deposition rate was observed for LaAlO3 films deposited by VSA MOCVD compared with that for the films grown by thermal MOCVD.