Publication | Closed Access
Planar and channel waveguide fabrication in LiB3O5 using MeV He+ ion implantation
23
Citations
6
References
1996
Year
Optical MaterialsEngineeringLaser ApplicationsOptoelectronic DevicesGold Wire MaskHigh-power LasersIon ImplantationOptical PropertiesGuided-wave OpticPlanar Waveguide SensorNanophotonicsMaterials SciencePhotonicsPlanar Lbo WaveguidesMicroelectronicsWaveguide FabricationMicrofabricationApplied PhysicsPlanar Waveguide TransmissionOptoelectronics
Multiple energy He+ ion implantation to increase the width of the implantation-induced refraction index barrier in LiB3O5 (LBO) is reported. Improvements in planar waveguide transmission (coupling and propagation) at the HeNe laser wavelength of 633 nm, from 5% to 45% for TE polarized light, and from 10% to 28% for TM polarized light in a ∼5-mm-long LBO planar waveguide are shown. Annealing is found to increase the transmission (coupling and propagation) at the wavelength of 633 nm of multiple-energy implanted planar LBO waveguides by as much as 24% for TE polarized light and 71% for TM polarized light. Channel waveguides in LBO fabricated by multiple-energy ion implantation through a gold wire mask and their use for second-harmonic generation are reported.
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